PCDB0865G1

Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDB0865G1_T0_00001

包装：管件 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 二极管 - 整流器 - 单 描述：650V SIC SCHOTTKY BARRIER DIODE

PCDC0865G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDD0865G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDE0865G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDP0865G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612