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PCDB0865G1

Marking:CDB0865G1;Package:TO-263;Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PANJITPan Jit International Inc.

強茂強茂股份有限公司

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