型号：PCDB10120G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.86609 Mbytes 页数：5 Pages

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