PCDB10120G1

Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDB10120G1_T0_00001

包装：管件 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

PCDC10120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDD10120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDE10120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDP10120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612