PCDB20120G1

Marking：CDB20120G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDB20120G1_T0_00001

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：1200V SIC SCHOTTKY BARRIER DIODE

PCDE20120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612

PCDH20120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard Application PFC,UPS,PVI

PCDP20120G1

SiliconCarbideSchottkyBarrierDiode

Features TemperatureIndependentSwitchingBehavior HighSurgeCurrentCapability PositiveTemperatureCoefficientonVF LowConductionLoss ZeroReverseRecovery Highjunctiontemperature175oC LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC612