UPC8119T-E3

Marking：C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

UPC8120T-E3

Marking：C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

C2M0025120D

Marking：C2M0025120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I

C2M0040120D

Marking：C2M0040120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •IncreasedPowerDensity

C2M0045170D

Marking：C2M0045170D；Package：TO-247-3L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features •2ndgenerationSiCMOSFETtechnology •HighblockingvoltagewithlowOn-Resistance •Highspeedswitchingwithlowcapacitances •Resistanttolatch-up •HalogenFree,RoHSCompliant Benefits •Highersystemefficiency •Reducedcoolingrequirements •Increasedpowerdensity

C2M0045170P

Marking：C2M0045170P；Package：TO-247-4L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features •2ndgenerationSiCMOSFETtechnology •Optimizedpackagewithseparatedriversourcepin •8mmofcreepagedistancebetweendrainandsource •HighblockingvoltagewithlowOn-Resistance •Highspeedswitchingwithlowcapacitances •Resistanttolatch-up •HalogenFree,RoHSCo

C2M1000170D

Marking：C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •Ultra-lowDrain-gatecapacitance •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •IncreasedSystemSwitchingFrequency •ReducedCool

C2M0045170P

Marking：C2M0045170P；Package：TO-247-4；Silicon Carbide Power MOSFET C2M MOSFET Technology

C2M0080170P

Marking：C2M0080170P；Package：TO-247-4；Silicon Carbide Power MOSFET C2M MOSFET Technology