N-Channel Enhancement Mode

Silicon Carbide Power MOSFET C2M™ MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, Ro

文件：969.31 Kbytes 页数：10 Pages

Cree

科锐

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：346.87 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C2M0025120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I

文件：893.05 Kbytes 页数：11 Pages

WOLFSPEED

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

1200 V Discrete Silicon Carbide MOSFETs

Stable RDS(ON) over temperatureAvailable in package options with separate Kelvin source pinExtremely fast switchingReduction of heat-sink requirements  • Stable RDS(ON) over temperature\n• Available in package options with separate Kelvin source pin\n• Extremely fast switching\n• Reduction of heat-sink requirements;

Wolfspeed(CREE)

SiC MOS

ChipNobo

无边界