丝印：C2M0045170D；Package：TO-247-3L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features • 2nd generation SiC MOSFET technology • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, RoHS Compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density

文件：977.83 Kbytes 页数：13 Pages

WOLFSPEED

丝印：C2M0045170D；Package：TO-247-3L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features • 2nd generation SiC MOSFET technology • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, RoHS Compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density

文件：977.83 Kbytes 页数：13 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High blocking voltage with low On-Resistance ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：417.06 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET C2MTM MOSFET Technology

文件：1.19749 Mbytes 页数：10 Pages

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