丝印：C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Increased System Switching Frequency • Reduced Cool

文件：918.65 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Increased System Switching Frequency • Reduced Cool

文件：918.65 Kbytes 页数：11 Pages

WOLFSPEED

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 1.4Ω（MAX）@VGS=20V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：348.25 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Carbide Power MOSFET Z-FETTM MOSFET

文件：620.11 Kbytes 页数：7 Pages

Cree

科锐

Silicon Carbide Power MOSFET

文件：1.05392 Mbytes 页数：10 Pages

Cree

科锐

Silicon Carbide Power MOSFET

文件：1.29914 Mbytes 页数：10 Pages

Cree

科锐