SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 1.4Ω（MAX）@VGS=20V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：348.25 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Increased System Switching Frequency • Reduced Cool

文件：918.65 Kbytes 页数：11 Pages

WOLFSPEED

Silicon Carbide Power MOSFET Z-FETTM MOSFET

文件：620.11 Kbytes 页数：7 Pages

Cree

科锐

Silicon Carbide Power MOSFET

文件：1.05392 Mbytes 页数：10 Pages

Cree

科锐

碳化硅 MOSFET

低电容，高频开关，高温环境工作\n更高电流下经过优化的开关行为\n具有低反向恢复电荷的整流稳健快速体二极管\n出色的热性能\n更高的雪崩耐量\n适应多种标准驱动程序\n3/4/7 引脚封装;

GDSICSEMI

广大碳基

1700 V Discrete Silicon Carbide MOSFETs

High blocking voltage with low RDS(on)High speed switching with low capacitancesFast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to driveLow parasitic inductanceWide creepage and clearance distance between drain and source • High blocking voltage with low RDS(on)\n• High speed switching with low capacitances\n• Fast intrinsic diode with low reverse recovery (Qrr)\n• Easy to parallel and simple to drive\n• Low parasitic inductance\n• Wide creepage and clearance distance between drain and source;

Wolfspeed(CREE)

SiC MOS

ChipNobo

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