丝印：C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency : f = 100 MHz to 1.92 GHz • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V • Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) • Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

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丝印：C2M；BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency : f = 100 MHz to 1.92 GHz • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V • Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) • Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

文件：663.95 Kbytes 页数：52 Pages

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丝印：C2M0025120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I

文件：893.05 Kbytes 页数：11 Pages

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丝印：C2M0040120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density

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丝印：C2M0045170D；Package：TO-247-3L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features • 2nd generation SiC MOSFET technology • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, RoHS Compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density

文件：977.83 Kbytes 页数：13 Pages

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丝印：C2M0045170P；Package：TO-247-4L；Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode

Features • 2nd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low On-Resistance • High speed switching with low capacitances • Resistant to latch-up • Halogen Free, RoHS Co

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丝印：C2M1000170；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Ultra-low Drain-gate capacitance • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Increased System Switching Frequency • Reduced Cool

文件：918.65 Kbytes 页数：11 Pages

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丝印：C2M0045170P；Package：TO-247-4；Silicon Carbide Power MOSFET C2M MOSFET Technology

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丝印：C2M0080170P；Package：TO-247-4；Silicon Carbide Power MOSFET C2M MOSFET Technology

文件：1.14011 Mbytes 页数：10 Pages

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科锐

丝印：C2M0025120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I

文件：893.05 Kbytes 页数：11 Pages

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