丝印：C2M0040120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density

文件：972.24 Kbytes 页数：11 Pages

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丝印：C2M0040120；Package：TO-247-3；Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density

文件：972.24 Kbytes 页数：11 Pages

WOLFSPEED

N-Channel Enhancement Mode

N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefts • Higher System Effciency •

文件：959.39 Kbytes 页数：10 Pages

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N-Channel Enhancement Mode

文件：961.44 Kbytes 页数：10 Pages

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