isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) • Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.5A • Very High Switching Speed APPLICATIONS • Designed for use in lighting applications and low cost switchmode power supplies.

文件：196.43 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desig

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STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

ST

意法半导体

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118F series is supplied in the SOT186 package. The BY

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PHI

PHI

Operational Amplifiers

文件：597.13 Kbytes 页数：18 Pages

NSC

国半

Operational Amplifiers

文件：597.13 Kbytes 页数：18 Pages

NSC

国半