Silicon NPN High Voltage Switching Transistor

Features ● Simple-sWitch-Off Transistor (SWOT) ● HIGH SPEED technology ● Planar passivation ● 100 kHz switching rate ● Very low switching losses ● Very low dynamic saturation ● Very low operating temperature ● Optimized RBSOA ● High reverse voltage Applications Electronic lamp ballas

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TEMIC

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.2V(Max) @IC= 0.8A APPLICATIONS · Electronic lamp ballast circuits

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ISC

无锡固电

硅NPN高电压开关晶体管

Temic

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Integrated Circuit TV Sound Channel, 2W

Description: The NTE742 is designed for use as the entire sound function in television receivers or FM table radios. The NTE742 sound channel will directly drive a 16 ohm speaker with more than 2 watts output. This monolithic integrated circuit will operate from a single 18V to 28V power supply a

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NTE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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POLYFET