isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) • Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1.0A • Very High Switching Speed APPLICATIONS • Designed for use in lighting applications and low cost switchmode power supplies

文件：195.71 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The BUL39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps. ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ MINIMUM LOT-TO-LO

文件：185.44 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：199.02 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：199.02 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• Integrated antiparallel collector-emitter diode\n• Low spread of dynamic parameters\n• High voltage capability• Very high switching speed\n• Minimum lot-to-lot spread for reliable operation;

ST

意法半导体

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 450V 4A TO220

STMICROELECTRONICS

意法半导体