Silicon NPN High Voltage Switching Transistor

Features ● Simple-sWitch-Off Transistor (SWOT) ● HIGH SPEED technology ● Planar passivation ● 100 kHz switching rate ● Very low switching losses ● Very low dynamic saturation ● Very low operating temperature ● Optimized RBSOA ● High reverse voltage Applications Electronic lamp ballas

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TEMIC

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.2V(Max) @IC=2A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies

文件：285.83 Kbytes 页数：2 Pages

ISC

无锡固电

硅NPN高电压开关晶体管

Temic

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

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FAIRCHILD

仙童半导体

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

文件：105.13 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt

文件：44.77 Kbytes 页数：2 Pages

ZETEX