Silicon NPN High Voltage Switching Transistor

Features ● Simple-sWitch-Off Transistor (SWOT) ● HIGH SPEED technology ● Planar passivation ● 100 kHz switching rate ● Very low switching losses ● Very low dynamic saturation ● Very low operating temperature ● Optimized RBSOA ● High reverse voltage Applications Electronic lamp ballas

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TEMIC

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) :0.2V(Max) @IC=1.6A APPLICATIONS · Electronic lamp ballast circuits · Switch-mode power supplies

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ISC

无锡固电

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■Features ●High reverse voltage VR ●Low forward voltage VF ●Fast reverse recovery time trr

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PANASONIC

松下

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

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MOTOROLA

摩托罗拉

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 M

文件：154.3 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉