BUF650

Silicon NPN High Voltage Switching Transistor

Features ●Simple-sWitch-OffTransistor(SWOT) ●HIGHSPEEDtechnology ●Planarpassivation ●100kHzswitchingrate ●Verylowswitchinglosses ●Verylowdynamicsaturation ●Verylowoperatingtemperature ●OptimizedRBSOA ●Highreversevoltage Applications Electroniclampballas

BUF650

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):0.2V(Max)@IC=1.6A APPLICATIONS ·Electroniclampballastcircuits ·Switch-modepowersupplies

BZP650

BZP650

C650

500WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •3Ux42TEx166.5mm •Weight:3.5kg

C650

TransientBlockingUnits-TBU??Devices

CDBD650-G

ChipSchottkyBarrierRectifier

CN650

NPNSILICONPLANAREPITAXIALTRANSISTORS

CNS650-M

TypeBFready

CNS650-M

ARTESYNCNS650-MSERIES

SPECIALFEATURES Designedforforcedairandnatural convectioncooling MedicalandITEsafetyapprovals,2x MOPP PMBus®interface ActivecurrentsharewithOR-ingFET Dualfused TypeBFready ActivePowerFactorCorrection, 61000-3-2compliant Built-inClassBEMIfilter Lessthan1U

CP650

POWERFET??SILICONEPITAXIALJUNCTIONN-CHANNELFIELDEFFECTTRANSISTORS