BLV1N60资料使用说明书供应代理仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
BLV1N60	文件：402.62 Kbytes Page：6 Pages	N-channel Enhancement Mode Power MOSFET	ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd
BLV1N60A	文件：402.25 Kbytes Page：6 Pages	N-channel Enhancement Mode Power MOSFET	ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd
1N60	文件：71.1 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance	ETCList of Unclassifed Manufacturers 未分类制造商
1N60	文件：80.99 Kbytes Page：2 Pages	SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司
1N60	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers 未分类制造商
1N60	文件：143.99 Kbytes Page：8 Pages	1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
1N60	文件：310.86 Kbytes Page：2 Pages	GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione	DAESAN Daesan Electronics Corp.
1N60	文件：51.09 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司
1N60	文件：197.55 Kbytes Page：4 Pages	SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi	LittelfuseLittelfuse Inc. 力特力特公司
1N60	文件：127.55 Kbytes Page：1 Pages	600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd
1N60	文件：138.98 Kbytes Page：2 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd
1N60	文件：72.86 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司
1N60	文件：239.88 Kbytes Page：2 Pages	SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: HighReliability LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching	WEITRONWEITRON 威堂電子科技
1N60	文件：1.04021 Mbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司
1N60	文件：947.3 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio	DIOTECH Diotech Company.
1N60	文件：275.21 Kbytes Page：6 Pages	1.2Amps,600/650VoltsN-CHANNELMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司
1N60	文件：419.26 Kbytes Page：3 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&	MCCMicro Commercial Components 美微科美微科半导体公司
1N60	文件：75.67 Kbytes Page：1 Pages	Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
1N60	文件：365.394 Kbytes Page：2 Pages	45VDetectionswitchtube	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行
1N60	文件：365.313 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行

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详细参数

型号：
BLV1N60
制造商：
ESTEK
制造商全称：
ESTEK
功能描述：
N-channel Enhancement Mode Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	BLV1N60	ESTEK	12+	TO-252	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市莱克讯科技有限公司	BLV1N60	BLV	2017+	TO251	35689	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市永贝尔科技有限公司	BLV1N60	ESTEK	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
深圳市科恒伟业电子有限公司	BLV1N60	BLV	1816+	.	6523	科恒伟业!只做原装正品,假一赔十!	询价
深圳诚思涵科技有限公司	BLV1N60	BL	18+	TO252	85600	保证进口原装可开17%增值税发票	询价
深圳市百视威讯电子科技有限公司	BLV1N60		23+	N/A	48900	正品授权货源可靠	询价
深圳市纳艾斯科技有限公司	BLV1N60	BL	2020+	TO-251	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市粤骏腾电子科技有限公司	BLV1N60	BELING/上海贝岭	23+	TO251	15000	原装正品原厂发货	询价
深圳市鼎欣微电子有限公司	BLV1N60	ESTEK	21+	TO-252	30000	只做正品原装现货	询价
深圳市航润创能电子集团有限公司	BLV1N60	BL	21+	TO-251	6	原装现货假一赔十	询价

更多BLV1N60供应商更新时间2024-4-27 11:04:00

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