RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 : 

文件：1.18402 Mbytes 页数：14 Pages

AMPLEON

安谱隆

UHF power LDMOS transistor

DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 65 W (PEP) – Gain = 12 dB – Efficiency = 32 – dim = −26 dBc • Ea

文件：104.97 Kbytes 页数：12 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 90 W (PEP) – Gain = 12 dB – Efficiency = 32 – dim = −26 dBc • Easy p

文件：107.43 Kbytes 页数：12 Pages

PHI

PHI

UHF power LDMOS transistor

DESCRIPTION 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. FEATURES • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA: – Output power = 10 W (PEP) – Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz – Efficiency

文件：156.7 Kbytes 页数：16 Pages

PHI

PHI

Power LDMOS transistor

General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stabilit

文件：1.32235 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stabilit

文件：1.32235 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

文件：1.14574 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

文件：1.14574 Mbytes 页数：15 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

文件：1.32244 Mbytes 页数：15 Pages

AMPLEON

安谱隆