Power LDMOS transistor

General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits  Excellent ruggedness (VSWR  40 : 1 through all phase

文件：1.51826 Mbytes 页数：18 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz. Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enab

文件：1.31526 Mbytes 页数：13 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description 750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz. Features and benefits  High efficiency  Excellent ruggedness  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enab

文件：1.31526 Mbytes 页数：13 Pages

Ampleon

安谱隆

N-Channel Enhancement Mode

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System ​​​​​​​

文件：81.73 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage

文件：88.93 Kbytes 页数：12 Pages

PHI

飞利浦

VHF POWER MOSFET

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System

文件：21.07 Kbytes 页数：1 Pages

ASI

HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltag

文件：285.21 Kbytes 页数：15 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

文件：281.31 Kbytes 页数：15 Pages

恩XP