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BLF145

HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage

文件:88.93 Kbytes 页数:12 Pages

PHI

PHI

PHI

BLF145

VHF POWER MOSFET

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System

文件:21.07 Kbytes 页数:1 Pages

ASI

BLF145

HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltag

文件:285.21 Kbytes 页数:15 Pages

恩XP

恩XP

BLF145

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BLF145

N-Channel Enhancement Mode

DESCRIPTION: The ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 20 dB Typ. at 30 W /28 MHz • Omnigold™ Metalization System ​​​​​​​

文件:81.73 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLF145

VHF POWER MOSFET N-Channel Enhancement Mode

DESCRIPTION:\nThe ASI BLF145 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz.FEATURES:\n• PG = 20 dB Typ. at 30 W /28 MHz\n• Omnigold™ Metalization System

ASI Semiconductor

ASI Semiconductor

BLF145

HF power MOS transistor

恩XP

恩XP

BLF145

Trans RF MOSFET N-CH 65V 6A 4-Pin SOT-123A

NJS

NJS

BLF145_15

HF power MOS transistor

文件:78.86 Kbytes 页数:12 Pages

JMNIC

锦美电子

BLF145_2015

HF power MOS transistor

文件:78.86 Kbytes 页数:12 Pages

JMNIC

锦美电子

技术参数

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    68000mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Frequency:

    28MHz

  • Maximum Drain Source Voltage:

    65V

  • Maximum Drain Source Resistance:

    750@10VmOhm

  • Maximum Continuous Drain Current:

    6A

  • Configuration:

    Single Dual Source

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

供应商型号品牌批号封装库存备注价格
恩XP
2017+
TO-59
849
原装正品,诚信经营
询价
PHI
2019+
SMD
6992
原厂渠道 可含税出货
询价
PHI
23+
1688
房间现货库存:QQ:373621633
询价
恩XP
24+
SOT-123A
112
询价
PHI
23+
TO-59
280
专营高频管模块,全新原装!
询价
恩XP
25+
SMD
2789
全新原装自家现货!价格优势!
询价
恩XP
24+
SMD
1680
NXP专营品牌进口原装现货假一赔十
询价
恩XP
18+
SOT-123
12500
全新原装正品,本司专业配单,大单小单都配
询价
恩XP
10+
3128
全新进口原装
询价
MOTOROLA/摩托罗拉
24+
TO-59
275
价格优势
询价
更多BLF145供应商 更新时间2022-6-12 10:12:00