VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking cod

文件：84.47 Kbytes 页数：12 Pages

PHI

PHI

VHP power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking cod

文件：147.44 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power LDMOS transistor

General description 200 W LDMOS power transistor for various applications such as Industrial, Scientific and Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz. Features and benefits  Excellent ruggedness  High efficiency  Low thermal resistance providing excell

文件：1.25014 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

文件：952.54 Kbytes 页数：13 Pages

AMPLEON

安谱隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed

文件：952.54 Kbytes 页数：13 Pages

AMPLEON

安谱隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

HF/VHF power MOS transistor

DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. FEATURES • Withstands full load mismatch • Emitter ballasting resistors for an optimum temperature profile

文件：138.49 Kbytes 页数：18 Pages

PHI

PHI