HF/VHF power MOS transistor

DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for class-A, B or C operation. The transistor is encapsulated in a 4-lead SOT122A stud envelope with a ceramic cap. FEATURES • Withstands full load mismatch • Emitter ballasting resistors for an optimum temperature profile

文件：138.49 Kbytes 页数：18 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

HFA/HF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range FEATURES • High power gain « Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch

文件：141.58 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HF-VHF power MOS transistor

恩XP

Trans RF MOSFET N-CH 125V 4A 4-Pin SOT-123A

NJS

HF/VHF power MOS transistor

文件：116.62 Kbytes 页数：18 Pages

JMNIC

锦美电子

HF/VHF power MOS transistor

文件：116.62 Kbytes 页数：18 Pages

JMNIC

锦美电子

Package：SOT-123A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET NCHA 125V 20DB SOT123A

Ampleon USA Inc.