General description

A 350 W extremely rugged LDMOS power transistor for broadcast and industrial

applications in the HF to 600 MHz band.

Features and benefits

 Easy power control

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

BLF183XRS属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。安谱隆半导体（合肥）有限公司制造生产的BLF183XRS晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。