BLF1822-10分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

DESCRIPTION

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

FEATURES

• Typical 2-tone performance at a supply voltage of 26 V

and IDQ of 85 mA:

– Output power = 10 W (PEP)

– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz

– Efficiency = 39 at 900 MHz, 34 at 2200 MHz

– dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz

• Easy power control

• Excellent ruggedness

• High power gain

• Excellent thermal stability

• Designed for broadband operation (HF to 2200 MHz)

• No internal matching for broadband operation.

APPLICATIONS

• RF power amplifiers for GSM, EDGE, CDMA and

W-CDMA base stations and multicarrier applications in

the HF to 2200 MHz frequency range

• Broadcast drivers.