Power LDMOS transistor

General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stabilit

文件：1.32235 Mbytes 页数：15 Pages

Ampleon

安谱隆

Power LDMOS transistor

General description A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits  Easy power control  Integrated double sided ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stabilit

文件：1.32235 Mbytes 页数：15 Pages

Ampleon

安谱隆

Power LDMOS transistor

文件：133.18 Kbytes 页数：11 Pages

PHI

飞利浦

Power LDMOS transistor

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Easy power control\nIntegrated double sided ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF to 600 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS);

Ampleon

安谱隆

Power LDMOS transistor

恩XP

Power LDMOS transistor

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Easy power control\nIntegrated double sided ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF to 600 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS);

Ampleon

安谱隆

Package：SOT-1121B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 135V 28DB SOT1121B

Ampleon USA Inc.

Package：SOT-1121B；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 135V 28DB SOT1121B

Ampleon USA Inc.