| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeLogicLevel) SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •LogicLevel •VGS(th)=0.8...2.0V | SIEMENS Siemens Ltd | SIEMENS | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingDIODESproprietary,highdensity,usesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperform | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-channelenhancementmodeverticalD-MOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. TheBSS123issuppliedintheSOT23subminiaturesurfacemountingpackage. FEATURES •’Trench’technology •Extremelyfastswitching •Logiclevelcompatible •Subminiatur | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET SOT23N-CHANNELENHANCEMENTMODEVERTICALDMOSFET | Zetex Zetex Semiconductors | Zetex | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModeFieldEffectTransistor ProductSummary ●VDS100V ●ID200mA ●RDS(ON)(atVGS=10V) | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •HighDenseCellDesignforExtremelyLowRDS(ON) •VoltageControlledSmallSignalSwitch •SurfaceMountPackage •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSComplian | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
N-CHANNELMOSFETinaSOT-23PlasticPackage Descriptions N-CHANNELMOSFETinaSOT-23PlasticPackage. Features HighdensitycelldesignforextremelylowRDS(ON). Applications ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELENHANCEMENTMODEMOSFET Description TheseN-Channelenhancementmodefieldeffecttransistorsusesadvancedtrenchtechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Theseproductsareparticularlysuitedforlowvoltage,lowcurr | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
SIPMOS??Small-Signal-TransistorFeature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-CHANNELPOWERMOSFET FEATURE ●Pb-FreePackageisavailable. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteand ControlChangeRequirements;AEC-Q101QualifiedandPPAPCapable. | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-channelTrenchMOStransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NChannelMOSFET NChannelMOSFET FEATURE ●SurfaceMountPackage ●HighDensityCellDesignforExtremelyLowRDS(ON) ●VoltageControlledSmallSignalSwitch ●RuggedandReliable APPLICATION ●SmallServoMotorControls ●PowerMOSFETGateDrivers ●SwitchingApplication | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelEnhancementModePowerMOSFET FEATURE ●Pb-FreePackageisavailable. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModeFieldEffectTramsistor Features •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •HighDrain-SourceVoltageRating | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
N-ChannelMOSFET Features ●VDS(V)=100V ●ID=0.17A(VGS=10V) ●RDS(ON) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancementModeMOSFET | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
100VN-ChannelEnhancementModeMOSFET–ESDProtected Features RDS(ON),VGS@10V,ID@170mA | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT |
详细参数
- 型号：
BH123
- 制造商：
ADAM-TECH
- 制造商全称：
Adam Technologies, Inc.
- 功能描述：
BATTERY HOLDERS & SNAPS AA, AAA, C, D & COIN CELL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADAM-TECH |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
MPD |
1941+ |
N/A |
81648 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
MPD |
22+ |
NA |
81648 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
一级代理 |
22+ |
N/A |
46100 |
一级代理放心采购 |
询价 | ||
STANDEXMEDER/斯丹麦德 |
23+ |
SMD |
515000 |
明嘉莱只做原装正品现货 |
询价 | ||
Standex-Meder Electronics |
23+ |
原厂封装 |
436 |
现货常备产品原装 |
询价 | ||
NEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
NEC |
16+ |
02 |
2100 |
公司大量全新现货 随时可以发货 |
询价 | ||
NEC |
23+ |
2 |
7300 |
专注配单,只做原装进口现货 |
询价 |
相关规格书
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- BH15LB1WHFV-TR
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- BH1600FVC-TR
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- BH1680FVC-TR
- BH1710FVC-TR
- BH1721FVC-TR
- BH1745NUC-E2
- BH1750FVI-TR
- BH1771GLC-E2
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