BGA7M1N6中文资料Silicon Germanium Low Noise Amplifier for LTE数据手册Infineon规格书

描述 Description

Silicon Germanium Low Noise Amplifier for LTE

特性 Features

Insertion power gain: 13.0 dB Low noise figure: 0.60 dB Low current consumption: 4.4 mA Operating frequencies: 1805 - 2200 MHz Supply voltage: 1.5 V to 3.3 V Digital on/off switch (1V logic high level) Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary 2kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package

简介

BGA7M1N6属于RF/IF射频/中频RFID的射频放大器。由制造生产的BGA7M1N6射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。