BGA7L1N6数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

Silicon Germanium Low Noise Amplifier for LTE

特性 Features

·Insertion power gain: 13.3 dB
·Low noise figure: 0.90 dB
·Low current consumption: 4.4 mA
·Operating frequencies: 728 - 960 MHz
·Supply voltage: 1.5 V to 3.3 V
·Digital on/off switch (1V logic high level)
·Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
·B7HF Silicon Germanium technology
·RF output internally matched to 50 Ω
·Only 1 external SMD component necessary
·2kV HBM ESD protection (including AI-pin)
·Pb-free (RoHS compliant) package

简介

BGA7L1N6属于RF/IF射频/中频RFID的射频放大器。由制造生产的BGA7L1N6射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。