BGA735N16数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network.

特性 Features

·Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
·Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode(800 MHz / 1900 MHz / 2100 MHz)
·Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands)
·Standby mode (< 2 μA typ.)
·Output internally matched to 50 Ω
·Inputs pre-matched to 50 Ω
·2kV HBM ESD protection
·Low external component count
·Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm)
·Pb-free (RoHS compliant) package

应用 Application

·LNA for LTE and 3G systems

简介

BGA735N16属于RF/IF射频/中频RFID的射频放大器。由制造生产的BGA735N16射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。