BGA713N7数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

The BGA713L7 is a low current single-band low noise amplifier MMIC for UMTS bands XII, XIII, XIV, XVII and XX. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSNP-7-1 or TSNP-7-2 leadless green packages. This document specifies electrical parameters, pinout, application circuit and packaging of the chip.

特性 Features

· Gain: 15.5 / -10 dB in high / low gain mode
· Noise figure: 1.1 dB in high gain mode
· Supply current: 4.8 / 0.5 mA in high / low gain mode
·Standby mode (< 2 μA typ.)
· Output internally matched to 50 Ω
· Inputs pre-matched to 50 Ω
· 2 kV HBM ESD protection
· Low external component count
· Small leadlessTSNP-7-1 / TSNP-7-2 packages (2.0 x 1.3 x 0.39 mm)
· Pb-free (RoHS compliant) package

应用 Application

·LNA for LTE and 3G systems

简介

BGA713N7属于RF/IF射频/中频RFID的射频放大器。由制造生产的BGA713N7射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。