Medium Power Amplifiers and Switches

文件：146.76 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT= 8GHz F= 1.3dB at 900MHz

文件：56.92 Kbytes 页数：7 Pages

SIEMENS

西门子

丝印：RCs；Package：SOT-23；NPN Silicon RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：80.25 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：RCs；Package：SOT-23；NPN Bipolar RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：514.48 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Bipolar RF Transistor

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：514.48 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件：54.04 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件：49.38 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

文件：70.12 Kbytes 页数：7 Pages

Infineon

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low-noise, high-gain applications such as power amplifiers up to 2GHz and f

文件：68.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broad band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. Feature

文件：146.84 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司