Silicon NPN Planar RF Transistor

Features • Low noise figure • High transition frequency fT = 8 GHz • Excellent large-signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    For low-noise, high-gain applications such as power amplifiers up to 2GHz and f

文件：68.89 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz F = 1.3 dB at 900 MHz

文件：56.88 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：80.59 Kbytes 页数：7 Pages

Infineon

英飞凌

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)

PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 (NPN)

文件：57.41 Kbytes 页数：7 Pages

SIEMENS

西门子

丝印：RCs；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：632.42 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：RCs；Package：SOT-23；NPN Silicon RF Transistor

文件：78.29 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

文件：78.29 Kbytes 页数：7 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：632.42 Kbytes 页数：6 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：542.07 Kbytes 页数：6 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：542.07 Kbytes 页数：6 Pages

Infineon

英飞凌