BFP842ESD数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads.

特性 Features

·Robust very low noise amplifier based on Infineon´s reliable, high volume
·SiGe:C technology
·Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
·High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
·High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
·Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
·Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor)
·Low power consumption, ideal for mobile applications
·Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads

应用 Application

As very low noise amplifier (LNA) in:·Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
·Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA)
·Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
·3G/4G UMTS/LTE mobile phone applications
·ISM applications like RKE, AMR and Zigbee

简介

BFP842ESD属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP842ESD晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。