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BFG10W-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFG10X

UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG10-X

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFG11

丝印:N72;Package:SOT-143;NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG11/X

丝印:N73;Package:SOT-143;NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG11SLASHX

丝印:N73;Package:SOT-143;NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorsencapsulatedinaplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG11W

NPN 2 GHz power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG11W/X

丝印:S4;Package:SOT-343;NPN 2 GHz power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG11WSLASHX

丝印:S4;Package:SOT-343;NPN 2 GHz power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic4-pindual-emitterSOT343package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability •Linearandnon-l

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

BFG135

NPN 7GHz wideband transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplasticSOT223envelope,intendedforwidebandamplifierapplications.Thesmallemitterstructures,withintegratedemitter-ballastingresistors,ensurehighoutputvoltagecapabilitiesatalowdistortionlevel. Thedistributionoft

PHIPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHI

技术参数

  • 测力量程:

    2.25 to 562 lbs (1.02 to 255 kg)

  • 显示形式:

    Digital Readout

  • 可编程性:

    Front Panel

  • 测量类型:

    Force / Weight / Load

  • 特殊类型:

    Handheld; Portable

  • 产品类别:

    Force and Torque Instruments

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
22+
SOT-223
92299
询价
恩XP
SOT343
3000
原装长期供货!
询价
PHI
2012+
SOT143B
500000
全新原装进口自己库存优势
询价
PHI
1215+
SOT343
150000
全新原装,绝对正品,公司大量现货供应.
询价
PHI
24+
SOT-143
3600
绝对原装!现货热卖!
询价
VISHAY
13+
DIP
15828
原装分销
询价
PHI
23+
SOP-143
6000
全新原装深圳现货库存,特价·
询价
24+
2000
全新
询价
PHI
24+
SOT-223
6980
原装现货,可开13%税票
询价
PHI
24+
SOT-343
4200
原装现货假一罚十
询价
更多BFG供应商 更新时间2025-7-31 8:30:00