BDT61C

isc Silicon NPN Darlington Power Transistors

DESCRIPTION •DCCurrentGain-hFE=750(Min)@IC=1.5A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C •ComplementtoTypeBDT60/A/B/C APPLICATIONS •Designedforuseinaudioamplifieroutputstages,generalpur

BDT61C

Silicon NPN Darlington Power Transistors

DESCRIPTION •DCCurrentGain-hFE=750(Min)@IC=1.5A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min)-BDT61;80V(Min)-BDT61A;100V(Min)-BDT61B;120V(Min)-BDT61C •ComplementtoTypeBDT60/A/B/C APPLICATIONS •Designedforuseinaudioamplifieroutputstages,generalpur

BDT61C

NPN SILICON POWER DARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBDT60,BDT60A,BDT60BandBDT60C ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof750at1.5V,3A

BDT61C

NPN SILICON POWER DARLINGTONS

BDT61CF

isc Silicon NPN Darlington Power Transistor

BDT61C-S

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 120V 4A TO220

Bourns Inc.