isc Silicon NPN Darlington Power Transistors

DESCRIPTION • DC Current Gain -hFE = 750(Min)@ IC= 1.5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C • Complement to Type BDT60/A/B/C APPLICATIONS • Designed for use in audio amplifier output stages , general pur

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ISC

无锡固电

Silicon NPN Darlington Power Transistors

DESCRIPTION • DC Current Gain -hFE = 750(Min)@ IC= 1.5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C • Complement to Type BDT60/A/B/C APPLICATIONS • Designed for use in audio amplifier output stages , general pur

文件：136.05 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A

文件：109.24 Kbytes 页数：6 Pages

POINN

NPN SILICON POWER DARLINGTONS

文件：108.58 Kbytes 页数：5 Pages

Bourns

伯恩斯

isc Silicon NPN Darlington Power Transistor

文件：278.12 Kbytes 页数：2 Pages

ISC

无锡固电

TRANS NPN DARL 120V 4A

Bourns

伯恩斯

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 120V 4A TO220

Bourns Inc.