isc Silicon PNP Darlington Power Transistors

DESCRIPTION ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min)- BDT62B; -120V(Min)- BDT62C ·Complement to Type BDT63/A/B/C APPLICATIONS ·Designed for use in

文件：265.9 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistors

文件：87.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BDT62C - 单晶体管 双极, 达林顿, PNP, 120 V, 90 W, 10 A, 200 hFE

The BDT62C is a PNP silicon Power Transistor in monolithic Darlington circuit for audio output stages, general amplifier and switching applications. ·NPN complement BDT63C;

TT Electronics

Trans Darlington PNP 120V 10A

NJS