零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
-200mA/-30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
-200mA/-30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
-200mA/-30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
PNP-200mA-30VDigitalTransistors(BiasResistorBuilt-inTransistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
-200mA/-30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
NPN200mA30VDigitalTransistors(BiasResistorBuilt-inTransistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
NPN200mA30VDigitalTransistors(BiasResistorBuilt-inTransistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
200mA/30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
200mA/30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
200mA/30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
NPN200mA30VDigitalTransistors(BiasResistorBuilt-inTransistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
200mA/30VLowVCE(sat)Digitaltransistors(withbuilt-inresistors) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
STEERINGDIODEARRAY FEATURES ✔ESDProtection>40kilovolts ✔LowClampingVoltage ✔ProvidesSix(6)LinesofProtection ✔LowLeakageCurrent | PROTECProtek Devices Protek Devices | PROTEC | ||
ultralowcapacitancesteeringdiodearray | PROTECProtek Devices Protek Devices | PROTEC | ||
STEERINGDIODEARRAY DESCRIPTION TheET723isalowcapacitanceandlowleakagesteeringdiodearraycapableofprotectinguptosix(6)highspeeddatalines.Itsultralowcapacitanceallowsmaintenanceofsignalintegrityforhigh-speeddatalineswhileprotectingthecircuitICsfromthedamageofseveretransien | PROTECProtek Devices Protek Devices | PROTEC | ||
200mASurfaceMountSmallSignalSchottkyDiode-30V | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
Surfacemountsmallsignaltype | FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司 | FORMOSA | ||
SwitchingTransistor Features ●625mWpowerdissipation ●ICCONT2.5A ●ICUpTo10Apeakpulsecurrent ●ExcellenthfeCharacteristicsUpTo10A(pulsed) ●ExtremelyLowSaturationVoltageE.g.10mVTyp. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS Features •BVCEO>-12V •IC=-2.5AContinuousCollectorCurrent •ICM=-10APeakPulseCurrent •LowSaturationVoltageE.g.-17mVMax@IC=-100mA. •RCE(sat)=72mΩat2.5Aforalowequivalenton-resistance •625mWpowerdissipation •hFEcharacterisedupto-10Aforhighcurrentgai | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SILICONPOWER(SWITCHING)TRANSISTORS FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat) | Zetex Zetex Semiconductors | Zetex |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
100V
- 最大电流允许值:
4A
- 最大工作频率:
>3MHZ
- 引脚数:
3
- 可代换的型号:
- 最大耗散功率:
36W
- 放大倍数:
- 图片代号:
B-21
- vtest:
100
- htest:
3000100
- atest:
4
- wtest:
36
详细参数
- 型号:
BD723
- 制造商:
ISC
- 制造商全称:
Inchange Semiconductor Company Limited
- 功能描述:
isc Silicon NPN Power Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS |
1800 |
询价 | |||||
PHI |
16+ |
T0-126 |
10000 |
全新原装现货 |
询价 | ||
N/A |
23+ |
原厂封装 |
5177 |
现货 |
询价 | ||
isc |
2024 |
TO-126/252/263 |
4750 |
国产品牌isc,可替代原装 |
询价 | ||
23+ |
20000 |
正品原装货价格低qq:2987726803 |
询价 | ||||
PHI |
05+ |
原厂原装 |
326 |
只做全新原装真实现货供应 |
询价 | ||
ON/安森美 |
23+ |
TO-126 |
10000 |
公司只做原装正品 |
询价 | ||
ON/安森美 |
TO-126 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ON/安森美 |
22+ |
TO-126 |
96430 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ON/安森美 |
22+ |
TO-126 |
96430 |
询价 |