Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

文件：46.49 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors

文件：138.09 Kbytes 页数：3 Pages

Intersil

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

文件：94.15 Kbytes 页数：4 Pages

Motorola

摩托罗拉

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Low Saturation Voltage • Complement to Type BD801 APPLICATIONS • Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and out

文件：246.28 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Low Saturation Voltage • Complement to Type BD801 APPLICATIONS • Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and out

文件：129.419 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Plastic High Power Silicon PNP Transistor

恩XP

Trans GP BJT PNP 100V 8A 3-Pin(3+Tab) TO-220

NJS

Plastic High Power Silicon PNP Transistor

ONSEMI

安森美半导体