Complementary Plastic Silicon Power Transistors

. . . designed for low power audio amplifier and low-current, high speed switching applications. • High Collector-Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Win) — BD789, BD790 = 100 Vdc (Min) — BD791, BD792 • High DC Current Gain @ IQ = 200 mAdc hpE = 40-250 • LowCollector-Emitter Satura

文件：109.02 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 100V 4A 3-Pin TO-225

NJS

Small Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：134.59 Kbytes 页数：2 Pages

Central

Smal Signal Transistor PNP - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.0 MILS Base Bonding Pad Area 3.7 x 3.7 MILS Emitter Bonding Pad Area 3.7 x 3.7 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å

文件：650.89 Kbytes 页数：2 Pages

Central

PolyLite™ PC

文件：143.98 Kbytes 页数：2 Pages

POLYMAKER