| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BD647 | NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A 文件：105.89 Kbytes 页数：5 Pages | Bourns 伯恩斯 | Bourns | |
BD647 | NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A 文件：90.32 Kbytes 页数：4 Pages | Bourns 伯恩斯 | Bourns | |
BD647 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647 文件：336.95 Kbytes 页数：5 Pages | COMSET | COMSET | |
BD647 | Silicon NPN Darlington Power Transistor Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting 文件：125.42 Kbytes 页数：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | NJSEMI | |
BD647 | NPN SILICON POWER DARLINGTONS PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A 文件：115.8 Kbytes 页数：6 Pages | POINN | POINN | |
BD647 | Silicon NPN Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications 文件：116.15 Kbytes 页数：4 Pages | SAVANTIC | SAVANTIC | |
BD647 | NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON TRANSISTORS 文件：125.89 Kbytes 页数：4 Pages | SIEMENS 西门子 | SIEMENS | |
BD647 | PNP SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON TRANSISTORS 文件：127.08 Kbytes 页数：4 Pages | SIEMENS 西门子 | SIEMENS | |
BD647 | isc Silicon NPN Darlington Power Transistor * Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) * High DC Current Gain : hFE= 750(Min) @IC= 3A * Low Saturation Voltage * Complement to Type BD648 文件：108.24 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
BD647 | SILICON DARLINGTON POWER TRANSISTORS 文件：112.31 Kbytes 页数：5 Pages | COMSET | COMSET |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD699，BD899，BDW73B，BDX33B，BDX53B，FD50B,
- 最大耗散功率：
62.5W
- 放大倍数：
- 图片代号：
B-10
- vtest：
100
- htest：
999900
- atest：
8
- wtest：
62.5
详细参数
- 型号：
BD647
- 功能描述：
达林顿晶体管 62.5W NPN Silicon
- RoHS：
否
- 制造商：
Texas Instruments
- 配置：
Octal
- 晶体管极性：
NPN 集电极—发射极最大电压
- VCEO：
50 V 发射极 - 基极电压
- VEBO：
集电极—基极电压
- 最大直流电集电极电流：
0.5 A
- 最大工作温度：
+ 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOIC-18
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-220 |
45000 |
ST/意法全新现货BD647即刻询购立享优惠#长期有排单订 |
询价 | ||
24+ |
TO-220 |
10000 |
全新 |
询价 | |||
ST/进口原 |
17+ |
TO-220 |
6200 |
询价 | |||
恩XP |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
POWER |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
询价 | ||
P |
23+ |
TO-220 |
398 |
询价 | |||
NEXPERIA/安世 |
23+ |
SOT108-1 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
POWER |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
恩XP |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ph |
25+ |
500000 |
行业低价,代理渠道 |
询价 |
