| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BD682 | Plastic Medium?뭁ower Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
BD682 | PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | TEL TRANSYS Electronics Limited | TEL | |
BD682 | Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD682 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor | COMSET | |
BD682 | Silicon PNP Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | |
BD682 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheBD681,aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-126plasticpackage. TheyareintendedforuseinmediumpowerlinarandswitchingapplicationsThecomplementaryPNPtypesareBD682,respectively. | TGS Tiger Electronic Co.,Ltd | TGS | |
BD682 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD682 | Silicon PNP Power Transistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
BD682 | Complementary power Darlington transistors Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD682 | PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | CDIL CDIL | CDIL | |
BD682 | SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor | COMSET | |
BD682 | Plastic Medium-Power Silicon PNP Darlingtons PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
BD682 | Medium Power Linear and Switching Applications MediumPowerLinearandSwitchingApplications •MediumPowerDarlingtonTR •ComplementtoBD675A,BD677A,BD679AandBD681respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
BD682 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
BD682 | Silicon PNP Darlington Power Transistor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
BD682 | Medium Power Linear and Switching | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
BD682 | 包装：散装 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 4A TO126 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
BD682 | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 4A SOT32-3 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
PNP DARLIGNTON POWER SILICON TRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | TEL TRANSYS Electronics Limited | TEL | ||
SILICON DARLINGTON POWER TRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor | COMSET |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
4A
- 最大工作频率：
>10MHZ
- 引脚数：
3
- 可代换的型号：
BD262B,FC50B,
- 最大耗散功率：
40W
- 放大倍数：
β>750
- 图片代号：
B-21
- vtest：
100
- htest：
10000100
- atest：
4
- wtest：
40
产品属性
- 产品编号：
BD682
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2.5V @ 30mA，1.5A
- 电流 - 集电极截止（最大值）：
500µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
750 @ 1.5A，3V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
TO-126
- 描述：
TRANS PNP DARL 100V 4A TO126
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
SOT-32 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
SY |
20+ |
TO-126 |
9986 |
询价 | |||
ST/ON |
16+ |
TO-126 |
8900 |
全新原装现货,假一罚十 |
询价 | ||
ON/安森美 |
2022+ |
TO-126 |
1334 |
原厂授权代理 价格绝对优势 |
询价 | ||
ON/ST |
22+ |
TO-126 |
15500 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
ST/意法半导体 |
SOT-32 |
6000 |
询价 | ||||
ST/意法半导体 |
2023 |
SOT-32 |
6000 |
公司原装现货/支持实单 |
询价 | ||
ST |
23+ |
TO126 |
997500 |
郑重承诺只做原装进口现货 |
询价 | ||
ON/ST |
1408+ |
126 |
9500 |
绝对原装进口现货可开增值税发票 |
询价 | ||
ST |
15+ |
TO126 |
6203 |
现货-ROHO |
询价 |
