首页 >BD676(A)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PlasticMedium-PowerSiliconPNPDarlingtons PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
MediumPowerLinearandSwitchingApplications MediumPowerLinearandSwitchingApplications •MediumPowerDarlingtonTR •ComplementtoBD675A,BD677A,BD679AandBD681respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PlasticMedium?뭁owerSiliconPNPDarlingtons PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PNPDARLIGNTONPOWERSILICONTRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | TEL | ||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SILICONDARLINGTONPOWERTRANSISTORS SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET Comset Semiconductor | COMSET | ||
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage—:V(BR)CEo=-45V •DCCurrentGain—:hFE=750(Min)@lc=-2A •ComplementtoTypeBD675A APPLICATIONS •Designedforuseasoutputdevicesincomplementarygeneral-purposeamplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PNPDARLIGNTONPOWERSILICONTRANSISTORS PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703. | CDIL Continental Device India Limited | CDIL | ||
MediumPowerLinearandSwitching | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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