isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40@ IC= 0.5A • Collector-Emitter Breakdown Voltage - : V(BR)CEO= 60V(Min) • Complement to type BD720 APPLICATIONS • Designed for use in audio output and general purpose amplifier applications.

文件：103.6 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE= 40@ IC= 0.5A • Collector-Emitter Breakdown Voltage - : V(BR)CEO= 60V(Min) • Complement to type BD720 APPLICATIONS • Designed for use in audio output and general purpose amplifier applications.

文件：129.63 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 60V 4A

NJS

Very fast high-voltage soft-recovery rectifiers

DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. FEATU

文件：62.89 Kbytes 页数：12 Pages

PHI

飞利浦

Very fast high-voltage soft-recovery rectifiers

文件：188.97 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

rohs compliant

文件：254.04 Kbytes 页数：5 Pages

TAOGLAS