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BFQ540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ540

NPNwidebandtransistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFQ540

NPNwidebandtransistor

DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ540

iscSiliconNPNRFTransistor

DESCRIPTION ·HighGain ·HighOutputVoltage ·LowNoise APPLICATIONS ·DesignedforuseinVHF,UHFandCATVamplifiers.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFQ540

NPNwidebanddualtransistor

DESCRIPTION NPNwidebandtransistorinaSOT89 plasticpackage. FEATURES •Highgain •Highoutputvoltage •Lownoise •Goldmetallizationensuresexcellentreliability •Lowthermalresistance. APPLICATIONS •VHF,UHFandCATVamplifiers.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFR540

NPN9GHzwidebandtransistor

DESCRIPTION TheBFR540isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MA

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFR540

iscSiliconNPNRFTransistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforRFfrontendinwidebandapplicationsinthe GHzrange,suchasanaloganddigitalcellulartelephones, cordlesstelephones(CT1,CT2,DEC,etc.).

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFR540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFS540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFS540

SiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz •HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS •DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BFS540

LowNoiseFigure

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz •HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS •DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFS540

NPN9GHzwidebandtransistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforRFwidebandamplifierapplicationssuchassatelliteTVsystemsandRFportablecommunicationequipmentwithsignalfrequenciesupto2GHz. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFU540

NPNSiGewidebandtransistor

DESCRIPTION NPNSiGewidebandtransistorforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Verylownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance •45GHzSiGeprocess. APPLICATI

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BGB540

A35dBGain-SlopedLNBI.F.AmplifierforDirectBroadcastSatelliteTelevisionApplicationsusingtheBGA430&BGB540SiliconMMICs

Description TheBGA430isabroadbandhighgainamplifierbaseduponInfineonTechnologies’SiliconBipolarTechnologyB6HF.HousedinasmallSOT363packagethisSiliconMonolithicMicrowaveIntegratedCircuit(MMIC)requiresveryfewexternalcomponentsduetotheintegratedbiasingconcept.

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BGB540

ActiveBiasedRFTransistor

Description SIEGET®-45NPNTransistorwithintegratedbiasingforhighgainlownoisefigureapplications.ICcanbecontrolledusingIBiasaccordingtoIC=10*IBias. Features •Gms=18dBat1.8GHz •SmallSOT343package •Currenteasyadjustablebyanexternalresistor •Opencollectoroutpu

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BGB540LNA

BGB540asa1.85GHzLowNoiseAmplifier

BGB540asa1.85GHzLowNoiseAmplifier

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BO540W

SCHOTTKYRECTIFIERVOLTAGE40VoltsCURRENT500mAmpers

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

BRUS540

ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

edi

C540

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

POWERBOX

Powerbox manufactures

C540U

8-BitCMOSMicrocontroller

SIEMENS

Siemens Ltd

详细参数

  • 型号:

    BD540S

  • 制造商:

    PANJIT

  • 制造商全称:

    Pan Jit International Inc.

  • 功能描述:

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

供应商型号品牌批号封装库存备注价格
PANJIT
23+
TO-252
33500
全新原装真实库存含13点增值税票!
询价
PANJIT
23+
TO-252
10000
公司只做原装正品
询价
PANJIT
22+
TO-252
6000
十年配单,只做原装
询价
PANJIT
22+
TO-252
25000
只做原装进口现货,专注配单
询价
PANJIT
22+23+
TO-252(DP
21016
绝对原装正品全新进口深圳现货
询价
DIODES
2008++
SOD-1231206
57200
新进库存/原装
询价
ST
23+
13
16900
支持样品,原装现货,提供技术支持!
询价
ST
22+
13
16900
支持样品 原装现货 提供技术支持!
询价
PANJIT/强茂
2021+
TO-252
50000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ROHM/罗姆
23+
SSOP3A 2.92×2.4, H=Max 1.12
24500
罗姆全系列在售
询价
更多BD540S供应商 更新时间2024-5-31 15:30:00