isc Silicon NPN Power Transistor

DESCRIPTION • Collector Current -IC= 15A • Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min)- BD545; 60V(Min)- BD545A 80V(Min)- BD545B; 100V(Min)- BD545C • Complement to Type BD546/A/B/C APPLICATIONS • Designed for use in general purpose power amplif

文件：256.75 Kbytes 页数：2 Pages

ISC

无锡固电

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

文件：87.12 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

文件：88.37 Kbytes 页数：6 Pages

POINN

NPN SILICON POWER TRANSISTORS

文件：104.33 Kbytes 页数：5 Pages

Bourns

伯恩斯

Designed for Complementary Use with the BD546 Series

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

文件：104 Kbytes 页数：4 Pages

Bourns

伯恩斯

TRANS NPN DARL 100V 15A

Bourns

伯恩斯

Package：TO-218-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 15A SOT93

Bourns Inc.