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BD540

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

BD540A

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

BD540A

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540A

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •ComplementtoTypeBD539A APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD540B

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain- :hFE=40(Min.)@IC=-0.5A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-80V(Min) •ComplementtoTypeBD539B APPLICATIONS •Designedforuseinmediumpowerlinearandswitching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD540B

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540B

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

BD540C

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

POINNPower Innovations Ltd

Power Innovations Ltd

BD540C

PNPSILICONPOWERTRANSISTORS

PNPSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe BD539Series ●45Wat25°CCaseTemperature ●5AContinuousCollectorCurrent ●Customer-SpecifiedSelectionsAvailable

BournsBourns Inc.

伯恩斯(邦士)

BD540C

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BD540T

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinlow

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD540YS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BD540YS

5.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

BD540YT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200Volts CURRENT5Amperes FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •Foruseinl

PANJITPANJIT International Inc.

强茂強茂股份有限公司

BFG540

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG540

NPNSILICONRFTRANSISTOR

Feature Highgain:︱S21e︱2TYP.Valueis13dB@VCE=8V,IC=40mA,f=0.9GHz Lownoise:NFTYP.Valueis1.8dB@VCE=10V,IC=10mA,f=0.9GHz fT(TYP.):TYP.Valueis9GHz@VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

BFG540

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG540

NPN9GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistors,intendedforwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,satelliteTVtuners(SATV),MATV/CATVamplifiersandrepeateramplifiersinfibre

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG540

iscSiliconNPNRFTransistor

DESCRIPTION •LowNoiseFigure NF=1.3dBTYP.@VCE=8V,IC=10mA,f=900MHz •HighGain ︱S21︱2=16dBTYP.@VCE=8V,IC=40mA,f=900MHz •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforuseinlownoise,h

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    BD540S

  • 制造商:

    PANJIT

  • 制造商全称:

    Pan Jit International Inc.

  • 功能描述:

    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

供应商型号品牌批号封装库存备注价格
PANJIT
23+
TO-252
33500
全新原装真实库存含13点增值税票!
询价
23+
N/A
30650
正品授权货源可靠
询价
PANJIT
23+
TO-252
10000
公司只做原装正品
询价
PANJIT
22+
TO-252
6000
十年配单,只做原装
询价
PANJIT
22+
TO-252
25000
只做原装进口现货,专注配单
询价
PANJIT
22+23+
TO-252(DP
21016
绝对原装正品全新进口深圳现货
询价
DIODES
2008++
SOD-1231206
57200
新进库存/原装
询价
ST
23+
13
16900
支持样品,原装现货,提供技术支持!
询价
ST
22+
13
16900
支持样品 原装现货 提供技术支持!
询价
PANJIT/强茂
2021+
TO-252
50000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多BD540S供应商 更新时间2024-5-15 10:54:00