| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Space-savingPlug-inSignalConditionersF-UNIT | MSYSTEMM-System Co., Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Space-savingPlug-inSignalConditionersF-UNIT | MSYSTEMM-System Co., Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Space-savingPlug-inSignalConditionersF-UNIT | MSYSTEMM-System Co., Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Space-savingPlug-inSignalConditionersF-UNIT | MSYSTEMM-System Co., Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Space-savingPlug-inSignalConditionersF-UNIT | MSYSTEMM-System Co., Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Space-savingPlug-inSignalConditionersF-UNIT | MSYSTEMM-System Co., Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
AluminiumHousedBrakingResistor | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | TEC | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RADs(Si)/s20nsPulse •La | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS166MSisan8-bitshiftregisterthathasfullysynchronousserialorparalleldataentryselectedbyanactiveLOWParallelEnable(PE)input.WhenthePEisLOWonesetuptimebeforetheLOW-to-HIGHclocktransition,paralleldataisenteredintotheregister.WhenP | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS166MSisan8-bitshiftregisterthathasfullysynchronousserialorparalleldataentryselectedbyanactiveLOWParallelEnable(PE)input.WhenthePEisLOWonesetuptimebeforetheLOW-to-HIGHclocktransition,paralleldataisenteredintotheregister.WhenP | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RADs(Si)/s20nsPulse •La | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RADs(Si)/s20nsPulse •La | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS166MSisan8-bitshiftregisterthathasfullysynchronousserialorparalleldataentryselectedbyanactiveLOWParallelEnable(PE)input.WhenthePEisLOWonesetuptimebeforetheLOW-to-HIGHclocktransition,paralleldataisenteredintotheregister.WhenP | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS166MSisan8-bitshiftregisterthathasfullysynchronousserialorparalleldataentryselectedbyanactiveLOWParallelEnable(PE)input.WhenthePEisLOWonesetuptimebeforetheLOW-to-HIGHclocktransition,paralleldataisenteredintotheregister.WhenP | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RADs(Si)/s20nsPulse •La | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RADs(Si)/s20nsPulse •La | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS166MSisan8-bitshiftregisterthathasfullysynchronousserialorparalleldataentryselectedbyanactiveLOWParallelEnable(PE)input.WhenthePEisLOWonesetuptimebeforetheLOW-to-HIGHclocktransition,paralleldataisenteredintotheregister.WhenP | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Description TheIntersilHCS166MSisan8-bitshiftregisterthathasfullysynchronousserialorparalleldataentryselectedbyanactiveLOWParallelEnable(PE)input.WhenthePEisLOWonesetuptimebeforetheLOW-to-HIGHclocktransition,paralleldataisenteredintotheregister.WhenP | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened8-BitParallel-Input/SerialOutputShiftRegister Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RADs(Si)/s20nsPulse •La | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MediumPowerAmplifier | BOWEIBOWEI Integrated Circuits CO.,LTD. 博威集成电路河北博威集成电路有限公司 | BOWEI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
45V
- 最大电流允许值：
1.5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD176,BD227,BD234,BD438,3CF2A,3CF2A,
- 最大耗散功率：
20W
- 放大倍数：
- 图片代号：
B-21
- vtest：
45
- htest：
999900
- atest：
1.5
- wtest：
20
详细参数
- 型号：
BD166
- 制造商：
MOTOROLA
- 制造商全称：
Motorola, Inc
- 功能描述：
Plastic Medium Power Silicon PNP Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
15+ |
TO-126 |
3066 |
现货-ROHO |
询价 | ||
PHI |
16+ |
T0-126 |
10000 |
全新原装现货 |
询价 | ||
ST |
24+ |
TO-126 |
5000 |
只做原装公司现货 |
询价 | ||
PHI |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
NXP |
23+ |
TO-126 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ST |
22+23+ |
TO-126 |
76330 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
NXP |
20+ |
TO-126 |
90000 |
全新原装正品/库存充足 |
询价 | ||
21+ |
35200 |
一级代理/放心采购 |
询价 | ||||
ST/意法 |
TO-126 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
NXP/恩智浦 |
23+ |
TO-126 |
10000 |
公司只做原装正品 |
询价 |
