丝印：BCR；Package：QFN-14；14V, 5A, H-Bridge Motor Driver

DESCRIPTION The MP6551 is an H-bridge motor driver. Its 2.5V to 14V input voltage (VIN) range allows the device to operate from a variety of battery power sources, including single-cell lithium-ion batteries, dual-cell lithium-ion batteries, and 3- cell to 6-cell alkaline batteries. Its low

文件：1.14407 Mbytes 页数：16 Pages

MPSIND

美国芯源

丝印：BCR*；Package：SOT-89；PNP Transistors

Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

文件：603.73 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：BCR601；Package：PG-DSO-8；BCR601 hot plug IC with voltage feedback to primary side

Features • Supply voltage 8 V to 60 V, • Supports use of NPN bipolar transistors and NMOSFETs, • 100 Hz/120 Hz supply voltage ripple suppression, • Supports an optocoupler voltage feedback loop to primary side minimizing power losses, • 3% analog dimming of LED current by a resistor or D

文件：376.31 Kbytes 页数：16 Pages

Infineon

英飞凌

丝印：BCRA；Package：3LdSOT-23；300nA NanoPower Voltage References

300nA NanoPower Voltage References The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typical, 1.5µA maximum operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2 and 50ppm/°C temperature coefficient.

文件：1.22435 Mbytes 页数：21 Pages

RENESAS

瑞萨

丝印：BCR112W；Package：SOT323；NPN Silicon Digital Transistor

文件：841.95 Kbytes 页数：8 Pages

Infineon

英飞凌

丝印：WHs；Package：SOT-23；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2 kΩ, R2=47 kΩ) • BCR108S: Two internally isolated transistors with good matching in one multichip package • BCR108S: For orientation in reel see packa

文件：211.61 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：WHs；Package：SOT-23；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

文件：491.12 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：WHs；Package：SOT-23；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

文件：216.55 Kbytes 页数：9 Pages

Infineon

英飞凌

丝印：WHs；Package：TSFP-3；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

文件：491.12 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：WHs；Package：TSFP-3；NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

文件：216.55 Kbytes 页数：9 Pages

Infineon

英飞凌