丝印：BCP56-16；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.72073 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BCP56-16；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.72167 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BCP56-16；Package：SOT223；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

文件：1.72073 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：BCP56；Package：SOT-223；NPN Medium Power Transistor

■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP51,BCP52,BCP53

文件：211.11 Kbytes 页数：3 Pages

KEXIN

科信电子

丝印：BCP56/16；Package：SOT223；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

文件：247.79 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP56/16；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

文件：1.74382 Mbytes 页数：22 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：8110DW；Package：SOT-223；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：402.56 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：P5616H；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

文件：1.25919 Mbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：BCP56/16；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：249.1 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P5616T；Package：SC-73；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

文件：287.1 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司